Prof Bill Milne
Contact Details:Extn: 48333, Fax: extn: 48348, Email: wim1
Bill Milne FREng, FIET, FIMMM has been Head of Electrical Engineering at Cambridge University since 1999, Director of the Centre for Advanced Photonics and Electronics( CAPE) since 2004 and Head of the Electronic Devices and Materials group since 1996 when he was appointed to the '1944 Chair in Electrical Engineering'. He obtained his BSc from St Andrews University in Scotland in 1970 and then went on to read for a PhD in Electronic Materials at Imperial College London. He was awarded his PhD and DIC in 1973 and in 2003, a D.Eng (Honoris Causa) from University of Waterloo, Canada. He was elected as Fellow of the Royal Academy of Engineering in 2006 and was awarded the JJ Thomson medal from the IET in 2008. He is a Guest Professor at HuangZhou University in Wuhan, China and a Distinguished Visiting Professor at SEU in Nanjing, China and at NUS, Singapore. He is also a Distinguished Visisting Scholar at KyungHee University, Seoul. From 1973 until 1976 he worked at the Plessey Res Co, Caswell after which he joined Cambridge University Engineering Department as an Assistant Lecturer. On arriving in Cambridge Prof. Milne set up the Electronic Devices and Materials group, which now has 7 Staff members, approximately 30 Post doctoral research staff and Fellows and over 50 PhD students. The yearly income is of order Eu 15 Million. His research interests include large area Si and carbon based electronics, thin film materials and, most recently, MEMS and carbon nanotubes and other 1-D structures for electronic applications. He currently collaborates with various companies including Thales, Samsung, Nokia, Aixtron, and FEI and is also currently involved in 3 EU projects and several UK Government funded EPSRC projects. He has published/presented ~ 650 papers, of which ~ 150 were invited.
Prof John Robertson
Contact Details:Extn: 48331, Fax: extn: 48348, Email:jr
John Robertson has a wide range of interests, including amorphous silicon and diamond-like carbon.
nHe has recently been producing theoretical models of the stability processes in a-Si:H in terms of the migration of hydorgen between defect sites, using the concepts of the 'hydorgen density of states'. He is developing a model of the deposition process of a-Si:H in terms of the surface and sub-surface processes.
nIn diamond-like carbon, he has a strong interest in the deposition process which gives rise to sp3 bonding, known as subsplantation, in which a carbon ion penetrates the surface atomic layer to reproduce subsurface densfication and sp3 bonding.
nHe has tried to incorporate electronic property data into an overall model of the electronic structure of DLCs, based on a distinction between pi and sigma states. This has led to recent models of the photoluminescence process and the variation of band gap with sp2 content.
nHe has recently worked on models of the field emission process in diamond and DLC, to try to understand the unique emission of these materials at relatively low fields. It is often remarked that diamond has a negative electron affinity, so that electrons in its conduction band lie above the vacuum level and can easily escape. This does not account for the universality of the low emission, and the recent model focuses on fluctuations in the local surface bonding with C-H, C-O or no groups, causing large internal fields which induce emission. This work is presented at 1997 MRS Fall conference, the 1998 MRS Spring conference and the 1998 Gordon conference on diamond.
nHe also has a strong interest in ferroelectric oxides such as (PbZr)TiO3 or PZT, (BaSr)TiO3 or BST and SrBi2Ta2O9 or SBT. these materials are important as either gate dielectrics in future CMOS Devices or as storage media in nonvolatile ferroelectric random access memories or 'FRAMs'. The band structures and defects of these materials were calculated with Chun-Wei Chen in order to underatand electronic properties for these applications.
Prof Michael Kelly
Contact Details:Extn: 48376, Email:mjk1
Professor Michael Kelly is the Prince Philip Professor of Technology in the University of Cambridge since 2002, and a Professorial Fellow at Trinity Hall. He was also Chief Scientific Advisor to the Department for Communities and Local Government, and a non-executive director of the Laird Group plc, both from July 2006.
Michael Kelly studied Mathematics and Physics to MSc level at Victoria University of Wellington in New Zealand, and completed his PhD in solid state physics at Cambridge in 1974. After a further seven years as post-doc working on the electronic structure of metals and semiconductors, he joined the GEC Hirst Research Centre in 1981. While there he and his team developed two new families of microwave devices that went, and are still, in production with E2V Technologies at Lincoln. From 1992-2002 he was Professor of Physics and Electronics at the University of Surrey, including a term as Head of the School of Electronics and Physical Sciences. During 2003-5, we was the Executive Director of the Cambridge-MIT Institute, an £80M project which brings together academics from Cambridge and MIT to work on research, education and industrial outreach for the benefit of the UK economy.
Dr Andrew Flewitt
Contact Details:Extn: 48332, Fax: extn: 48348, Email:ajf
Dr Andrew Flewitt, who is a member of the University Engineering
nDepartment, received his PhD from the University of Cambridge in 1998
ninvestigating the growth of hydrogenated amorphous silicon thin films
nusing scanning tunnelling microscopy. Andrew stayed in the Engineering
nDepartment following the Ph. D. as a Research Associate sponsored by Philips Research Laboratories working on the low temperature fabrication of thin film transistors for liquid crystal displays. Andrew was appointed to Lectureship in August 2002 and promoted to Senior Lecturer in 2006. Current research interests include the degradation mechanisms of amorphous silicon thin films transistors, zinc oxide thin film transistors and silicon nanowires-polymer composite semiconductor materials. More recently, research activities have included the study of MicroElectroMechanical Systems (MEMS). Of particular interest is the integration of silicon with plastics in devices and biological sensing devices based on surface acoustic wave devices and dielectric spectroscopy.
Dr Stephan Hofmann
Contact Details:Extn: 48346, Fax: extn: 48348, Email:sh315
Dr Stephan Hofmann is a Reader in Nanotechnology.
His research explores novel materials, metrology and device architectures. A particular focus thereby lies on nanomaterials, such as graphene, carbon nanotubes and semiconductor nanowires, and the use of in-situ metrology to probe the fundamental mechanisms that govern their growth and functionality.
The nanometer dimensions can lead to extraordinary properties and being able to control and exploit those can have a transformative impact across a wide range of applications, such as information/communication technologies, energy generation, conversion and storage, and environmental and bio-technology. The vision of Dr Hofmann’s research is to unlock this huge technological potential through an unprecedented understanding of material design and functionality on the smallest of size scales.
Dr Hofmann is leading a number of large research projects, funded eg by the ERC and EPSRC, with close industrial links and embedded in a large network of international collaborations.
Please visit Dr Hofmann’s research group homepage for further details Group Web Page
Dr Hannah Joyce
Contact Details:Extn: 48346, Email:hjj28
Dr Joyce’s research aims to create nanoscale and low-dimensional components for future electronic and optoelectronic devices. These components include low-dimensional materials such as graphene, monolayer transition metal dichalcogenides (e.g. monolayer MoS2) and semiconductor nanowires.
Particularly promising are semiconductor nanowires made out of III–V materials, such as GaAs, InAs, InP and AlGaAs. These nanowires typically feature diameters between 10 to 100 nm and lengths of several microns. The excellent electronic properties of these III–V materials, coupled with the tiny dimensions of the nanowire geometry, make III–V nanowires outstanding candidates for future electronic and optoelectronic devices, including light emitting diodes, lasers and solar cells.
If nanoscale materials are to be useful in future devices, we need to be able (i) to fabricate them controllably and reproducibly using techniques such as chemical vapour deposition and molecular beam epitaxy, (ii) to measure and control their fundamental optical and electronic properties, and (iii) to develop processing techniques to make functional devices. Dr Joyce’s research endeavours to grow and characterise nanowires and other low-dimensional materials, and implement novel devices, particularly solar cell devices, based on these materials.